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UPS Transistor U2010, PROJECT NO-P8041, DWG POS:TR1-TR2,Type: SKM 300 GB 123 D

UPS Transistor U2010, PROJECT NO-P8041, DWG POS:TR1-TR2,Type: SKM 300 GB 123 D
UPS Transistor U2010, PROJECT NO-P8041, DWG POS:TR1-TR2,Type: SKM 300 GB 123 D
  • MODEL: U2010, PROJECT NO-P8041, DWG POS:TR1-TR2,Type: SKM 300 GB 123 D
  • LEAD TIME: 1week
$74.12

Product data sheet

Features

• MOS input (voltage controlled)

• N channel, Homogeneous Si

• Low inductance case

• Very low tail current with low

temperature dependence

• High short circuit capability,

self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL

diodes8)

• Isolated copper baseplate

using DCB Direct Copper Bonding Technology

• Large clearance (12 mm) and

creepage distances (20 mm).

Typical Applications: → B6-153

• Switching, not for linear use

• AC-inverter drives

• UPS

1) Tcase = 25 °C, unless otherwise

specified 2) IF = – IC, VR = 600 V,

– diF/dt = 2000 A/µs, VGE = 0 V

3) Use VGEoff = -5 ... -15 V

5) see fig. 2 + 3; RGoff = 4,7 Ω

6) The free-wheeling diodes of

the GAL and GAR types have

the data of the inverse diodes

of SKM 400 GA 123 D

8) CAL = Controlled Axial Lifetime

Technology.